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IXFN40N110P |
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| Part Number | IXFN40N110P |
| Manufacturer | IXYS Corporation |
| Description | PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case... |
| Features |
• International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inductive Switching (UIS) t = 1min t = 1s rated • Low package inductance Mounting torque Terminal connection torque - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 20A,... |
| Document |
 IXFN40N110P Data Sheet
PDF 129.35KB |
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Desde 2024. D4U Semiconductor.
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