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IXTH40N30 |
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| Part Number | IXTH40N30 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0.10 Ω 0.085 Ω 0.088 Ω Symbol VDSS VDGR VGS VGSM ID... |
| Features |
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.10 0.085 0.088 V V nA µA mA Ω Ω Ω
Applications
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VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V V... |
| Document |
 IXTH40N30 Data Sheet
PDF 138.49KB |
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