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INCHANGE SPB DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
SPB08P06P

INCHANGE
P-Channel MOSFET

·Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Fast switching appl
Datasheet
2
SPB20N60S5

INCHANGE
N-Channel MOSFET

·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconducto
Datasheet
3
SPB03N60C3

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
4
SPB11N60C3

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
5
SPB11N60S5

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
6
SPB21N50C3

INCHANGE
N-Channel MOSFET

·With TO-263( D²PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power
Datasheet
7
SPB16N50C3

INCHANGE
N-Channel MOSFET

·With TO-263( D²PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power
Datasheet
8
SPB12N50C3

INCHANGE
N-Channel MOSFET

·With TO-263( D²PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power
Datasheet
9
IRF5210SPBF

INCHANGE
P-Channel MOSFET

·P-channel
·With TO-263(D2PAK) packaging
·Uninterruptible power supply
·High speed switching
·Ultra low on-resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operationz INCHANGE Semiconductor
Datasheet
10
IRFZ24NSPbF

INCHANGE
N-Channel MOSFET

·With TO-263(D2PAK) packaging
·Surface mount
·High speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operationz
·APPLICATIONS
·Switching applications INCHANGE Semiconductor IRFZ24NSPbF
Datasheet
11
SPB02N60C3

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
12
SPB02N60S5

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
13
SPB04N60C3

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
14
SPB07N60C3

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
15
SPB04N60S5

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
16
SPB07N60S5

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
17
SPB17N80C3

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
18
SPB20N60C3

INCHANGE
N-Channel MOSFET

·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE
Datasheet
19
SPB04N50C3

INCHANGE
N-Channel MOSFET

·With TO-263( D²PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power
Datasheet
20
SPB80P06P

INCHANGE
P-Channel MOSFET

·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Fast switching applic
Datasheet



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