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SPB12N50C3 |
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| Part Number | SPB12N50C3 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-... |
| Features |
·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11.6 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A W ℃ ℃ SPB12N50C3 ·THER... |
| Document |
 SPB12N50C3 Data Sheet
PDF 225.27KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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