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SPB17N80C3 |
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| Part Number | SPB17N80C3 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor SPB17N80C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 17 11 51 PD Total Dissipation @TC=25℃ 208 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHA... |
| Document |
 SPB17N80C3 Data Sheet
PDF 254.35KB |
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Desde 2024. D4U Semiconductor.
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