INCHANGE SPA Hoja de datos

No.	parte #	Fabricante	Descripción
1	SPA08N80C3	INCHANGE	N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications IN
2	SPA11N60C3	INCHANGE	N-Channel MOSFET ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconduc
3	SPA15N60CFD	INCHANGE	N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS
4	SPA15N65C3	INCHANGE	N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications IN
5	SPA20N60C3	INCHANGE	N-Channel MOSFET ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconduc
6	SPA06N60C3	INCHANGE	N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS
7	SPA17N80C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Ideal for high-frequency switching a
8	SPA15N60C3	INCHANGE	N-Channel MOSFET · Drain-source on-resistance: RDS(on) ≤ 0.28Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATIN
9	SPA08N50C3	INCHANGE	N-Channel MOSFET ·Drain Current ID= 7.6A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS
10	SPA07N65C3	INCHANGE	N-Channel MOSFET ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconduc
11	SPA11N60CFD	INCHANGE	N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS
12	SPA11N80C3	INCHANGE	N-Channel MOSFET ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconduc
13	SPA20N60CFD	INCHANGE	N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS
14	SPA20N65C3	INCHANGE	N-Channel MOSFET ·With TO-220F packaging ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semicondu
15	SPA07N60CFD	INCHANGE	N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS
16	SPA04N80C3	INCHANGE	N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·
17	SPA02N80C3	INCHANGE	N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·A
18	SPA11N60C3E8185	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak curr
19	SPA21N50C3	INCHANGE	N-Channel MOSFET ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSO
20	SPA12N50C3	INCHANGE	N-Channel MOSFET ·With TO-220F Package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS