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SPA20N60C3 |
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| Part Number | SPA20N60C3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot... |
| Features |
·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor SPA20N60C3 ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 20.7 13.1 62.1 PD Total Dissipation 34.5 Tj Operating Junction Temperature -55~150 Tstg ... |
| Document |
 SPA20N60C3 Data Sheet
PDF 197.22KB |
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Desde 2024. D4U Semiconductor.
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