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SPA21N50C3 |
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| Part Number | SPA21N50C3 |
| Manufacturer | INCHANGE |
| Description | INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100% avalanche tested ·Minimum Lot-... |
| Features |
·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 21 13.1 A IDM Drain Current-Single Pulsed 63 A PD Total Dissipation @TC=25℃ 34.5 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Stor... |
| Document |
 SPA21N50C3 Data Sheet
PDF 221.28KB |
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Desde 2024. D4U Semiconductor.
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