| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
INCHANGE |
NPN Transistor isc Silicon NPN Darlington Power Transistor KT8232A1 ELECTRICAL CHARACTERISTICS TBCB=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ☆VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 30mA VCE(sat) Collector-Emitter Saturation Vol |
|
|
|
|
INCHANGE |
NPN Transistor IC= 100μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 100μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistors own Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE |
|
|
|
|
INCHANGE |
NPN Transistor ：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor KT829A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage |
|
Desde 2024. D4U Semiconductor.
|