Busque con el número de pieza junto con el fabricante o la descripción
KT8232A1 |
Click to view a larger image
| Part Number | KT8232A1 |
| Manufacturer | INCHANGE |
| Description | ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive environm... |
| Features |
isc Silicon NPN Darlington Power Transistor
KT8232A1
ELECTRICAL CHARACTERISTICS
TBCB=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
☆VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 30mA
VCE(sat) Collector-Emitter Saturation Voltage ICB= 8A; IBB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
ICB=
8A;
I = BB
B
0.1A
V = CE B
B
350V;
I = BB
B
0
V = CE B
B
350V;
I = BB
B
0;TBCB=125℃
V = EB B
B
5V;
I =0 CB
B
hBFE
DC Current Gain
I = CB
B
5A
;
V = CE B
B
5V
MIN TYP. MAX UNIT
350
V
... |
| Document |
 KT8232A1 Data Sheet
PDF 192.17KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|