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INCHANGE |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 15V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta= |
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INCHANGE |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMU |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) <6mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
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INCHANGE |
Three Terminal Positive Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of 5V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM |
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INCHANGE |
N-Channel MOSFET & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=VGS,ID= 1mA RDS(ON |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
Thyristors esistance Junction to case MIN MAX UNIT 1 15 mA 1.6 V 10 50 mA 1.5 V 0.6 ℃/W Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presente |
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INCHANGE |
Silicon NPN Power Transistor on Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC curr |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 72A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
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INCHANGE Semiconductor |
isc Silicon NPN Darlington Power Transistor IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 20mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 ICBO Collector Cutoff Current VCB= 400V;IE= 0 IEBO Emitter Cutoff |
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Inchange Semiconductor |
isc Silicon NPN Power Transistors registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage TIP562 TIP563 IC=10mA ; IB=0 VCE(sat)-1 Collector |
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Inchange Semiconductor |
isc Silicon NPN Power Transistors registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage TIP562 TIP563 IC=10mA ; IB=0 VCE(sat)-1 Collector |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max)@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DES |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 44A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15.7mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DES |
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Desde 2024. D4U Semiconductor.
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