ISCN372M INCHANGE Silicon NPN Power Transistor Datasheet. existencias, precio

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ISCN372M

INCHANGE
ISCN372M
ISCN372M ISCN372M
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Part Number ISCN372M
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-def...
Features on Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC current gain IC= 1A ; VCE= 5V ISCN372M MIN MAX UNIT 700 V 5.0 V 1.5 V 10 μA 1.0 mA 1.0 mA 20 40 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are inten...

Document Datasheet ISCN372M Data Sheet
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