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ISCNL256N |
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| Part Number | ISCNL256N |
| Manufacturer | INCHANGE |
| Description | ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
& iscsemi is registered trademark
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=VGS,ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=30A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1.0MHz RG Gate resistance f = 1.0MHz open drain Qg Total Gate Charge ... |
| Document |
 ISCNL256N Data Sheet
PDF 627.95KB |
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