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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25 |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 650V ·Static drain-source on-resistance: RDS(on) ≤ 99mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 104mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power s |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 43mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 130mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power s |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 70mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor FCH072N60F ·APPLICATIONS ·Switching applicatio |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 170mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power s |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-220F packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switc |
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INCHANGE |
Schottky Barrier Rectifier ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot vari |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor FCH067N65S3 ·APPLICATIONS |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 650V ·Static drain-source on-resistance: RDS(on) ≤ 99mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power su |
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INCHANGE |
N-Channel MOSFET ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Power factor correction ·Switched mode power supplies ·Un |
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Desde 2024. D4U Semiconductor.
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