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INCHANGE |
NPN Transistor registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB |
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INCHANGE |
Silicon NPN Power Transistors ange THERMAL CHARACTERISTICS SYMBOL PARAMETER 1 A 22 W 150 ℃ -65~15 0 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com 55 ℃/W 1 isc & iscsemi is |
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INCHANGE |
Silicon NPN Power Transistors ange THERMAL CHARACTERISTICS SYMBOL PARAMETER 1 A 22 W 150 ℃ -65~15 0 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com 55 ℃/W 1 isc & iscsemi is |
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Inchange Semiconductor |
Silicon PNP Power Transistor CTERISTICS SYMBOL PARAMETER -65~150 MAX Rth j-c Thermal Resistance,Junction to Case 2.5 Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP D |
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INCHANGE |
NPN Transistor ion to Case MAX UNIT 1.39 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless |
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INCHANGE |
PNP Transistor Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 8.12 ℃/W Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.com 1 isc & is |
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INCHANGE |
Silicon NPN Power Transistors ange THERMAL CHARACTERISTICS SYMBOL PARAMETER 1 A 22 W 150 ℃ -65~15 0 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com 55 ℃/W 1 isc & iscsemi is |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT6 |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT6 |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter |
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INCHANGE |
Silicon PNP Darlington Power Transistors TERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 1.39 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power |
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INCHANGE |
Silicon PNP Darlington Power Transistor ebsite：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64F -60 |
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INCHANGE |
NPN Transistor ion to Case MAX UNIT 1.39 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless |
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INCHANGE |
NPN Transistor ion to Case MAX UNIT 1.39 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless |
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INCHANGE |
PNP Transistor ermal Resistance,Junction to Case MAX UNIT 6.3 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT42F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM |
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INCHANGE |
NPN Transistor red trademark isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41AF BDT41BF IC= 30mA; |
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INCHANGE |
PNP Transistor Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 8.12 ℃/W Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.com 1 isc & is |
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INCHANGE |
PNP Transistor ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 9.17 55 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & i |
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INCHANGE |
PNP Transistor ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 9.17 55 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & i |
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INCHANGE |
PNP Transistor ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 9.17 55 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & i |
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Desde 2024. D4U Semiconductor.
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