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Silicon PNP Power Transistor semi is registered trademark isc Silicon PNP Power Transistor BD944/946/948 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD944 BD946 BD948 IC= -30mA |
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Silicon PNP Power Transistor TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VCE(sat)-2 Collector-Emitter Saturation Voltag |
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PNP Transistor ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage |
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PNP Transistor licon PNP Power Transistor BD944F/946F/948F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD944F -22 VCEO(SUS) Collector-Emitter Sustaining Voltage BD946F IC= -30mA ; IB= 0 -32 |
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NPN Transistor ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA |
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Silicon PNP Power Transistor on to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F ELECTRICAL CHARACTERISTICS TC=25℃ unless o |
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INCHANGE |
Silicon PNP Power Transistor on to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F ELECTRICAL CHARACTERISTICS TC=25℃ unless o |
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INCHANGE |
Silicon PNP Power Transistor L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VCE(sat)-2 Collector-Emitter Satu |
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Inchange Semiconductor |
Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown |
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Inchange Semiconductor |
Silicon PNP Power Transistor L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage I |
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Inchange Semiconductor |
Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit |
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Inchange Semiconductor |
Silicon NPN Power Transistors CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistors ified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A VBE(sat) B |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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INCHANGE |
Silicon PNP Power Transistor istance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD934/936/938/940/942 ELECTRIC |
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INCHANGE |
NPN Transistor Case 4.17 ℃/W Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci |
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INCHANGE |
NPN Transistor nction to Ambient 62.5 ℃/W BD901 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD901 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS |
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INCHANGE |
NPN Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 |
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INCHANGE |
PNP Transistor sistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO |
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Desde 2024. D4U Semiconductor.
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