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BD940F |
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| Part Number | BD940F |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= -150mA ·Complement to Type BD933F/935F/937F/939F/941F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed ... |
| Features |
on to Case
4.17 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD934F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD936F BD938F IC= -30mA ; IB= 0 BD940F
BD942F
VCE(sat) VBE(on)
ICBO ICEO
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
IC= -1A; VCE= -2V
VCB= VCBOmax; IE... |
| Document |
 BD940F Data Sheet
PDF 214.77KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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