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BD901 |
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| Part Number | BD901 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement... |
| Features |
nction to Ambient 62.5 ℃/W
BD901
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BD901
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
2.5
V
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
2.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0 VCB= 100V; IE= 0; TC= 100℃
0.2 mA
2.0
ICEO
Collector Cutoff Current
VCE= 50V;... |
| Document |
 BD901 Data Sheet
PDF 207.59KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BD900 |
INCHANGE |
PNP Transistor |
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| 2 | BD900 |
Power Innovations Limited |
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| 3 | BD900 |
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| 4 | BD900 |
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| 6 | BD9002HFP |
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Desde 2024. D4U Semiconductor.
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