Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BD900 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD900 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD899 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . |
| Features | sistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; I. |
| Part Number | BD900 |
| Manufacturer | Power Innovations Limited |
| Title | PNP Transistor |
| Description | BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A . |
| Features | the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot TA Tj Tstg VCEO VCBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms. |
| Part Number | BD900 |
| Manufacturer | Comset Semiconductors |
| Title | Silicon NPN Power Transistors |
| Description | SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application. |
| Features |
BD898 – BD900 – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0, VCE = - 30 V IE= 0, VCE = - 30 V IE= 0, VCE = - 40 V IE= 0, VCE = - 50 V www.DataSheet.net/ Min Typ Max Unit. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD9001F |
Rohm |
Flexible Step-Down Switching Regulator |
|
| 2 | BD9002HFP |
Rohm |
Flexible Step-Down Switching Regulator |
|
| 3 | BD900A |
Power Innovations Limited |
PNP Transistor |
|
| 4 | BD900A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | BD900A |
INCHANGE |
PNP Transistor |
|
| 6 | BD901 |
INCHANGE |
NPN Transistor |
|
| 7 | BD901 |
Bourns Electronic Solutions |
NPN Transistor |
|
| 8 | BD901 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | BD9011EKN |
Rohm |
High-efficiency Switching Regulators |
|
| 10 | BD9011KV |
Rohm |
High-efficiency Switching Regulators |
|
Desde 2024. D4U Semiconductor.
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