Part Number | BD901 |
Distributor | Stock | Price | Buy |
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Part Number | BD901 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD902 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . |
Features | nction to Ambient 62.5 ℃/W BD901 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD901 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12m. |
Part Number | BD901 |
Manufacturer | Bourns Electronic Solutions |
Title | NPN Transistor |
Description | www.DataSheet4U.com BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in e. |
Features | emperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TA Tj Tstg VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION 1 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS electrical characteristics at 25. |
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---|---|---|---|---|
1 | BD900 |
INCHANGE |
PNP Transistor | |
2 | BD900 |
Power Innovations Limited |
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3 | BD900 |
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(BD900 / BD902) SILICON POWER TRANSISTOR | |
4 | BD900 |
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5 | BD9001F |
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6 | BD9002HFP |
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7 | BD900A |
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8 | BD900A |
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9 | BD900A |
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10 | BD9011EKN |
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