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PNP Transistor B= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0. |
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Silicon PNP Power Transistor n Voltage IE= -0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Cain IC= -0.1A ; VCE= -5V fT Current-Gai |
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PNP Transistor B= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0. |
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NPN Transistor ure Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 24 A 80 W 150 ℃ -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W MJB13007 iis |
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PNP Transistor B= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0. |
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Silicon PNP Power Transistor eakdown Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; |
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PNP Transistor CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base -Emitter On Voltage IC= -5A; VCE= -5V ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current G |
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PNP Transistor A; IB= -0.7A VBE(on) Base -Emitter On Voltage IC= -7A; VCE= -5V ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5 |
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PNP Transistor OL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= - |
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PNP Transistor pecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff C |
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PNP Transistor tter Breakdown Voltage IC= -1mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA -1.5 V ICBO Collector Cutoff Current VCB= -80V ; IE= 0 -100 μA |
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PNP Transistor 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A |
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PNP Transistor MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -2.5 V VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -180V ; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= |
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PNP Transistor e Breakdown Voltage IC= -10μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat)★ Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat)★ Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on)★ Base-Emitter |
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PNP Transistor oltage IC= -30mA; RBE= ∞ -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA -3.0 |
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PNP Transistor A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -5V fT Current-Gain—Bandwidth Product |
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PNP Transistor ning Voltage IC= -25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-0.1mA; IE= 0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC= -4A; IB= -8mA VCE(sat) -2 Collector-Emitter Sa |
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N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) =0.45Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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Inchange Semiconductor |
Silicon PNP Power Transistors S V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter C |
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Inchange Semiconductor |
Silicon PNP Power Transistors BOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= |
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Desde 2024. D4U Semiconductor.
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