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B1370 |
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| Part Number | B1370 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operati... |
| Features |
B= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC=-0.5A; VCE= -5V; ftest= 5MHz
MIN TYP. MAX UNIT
-60
V
-60
V
-5
V
-1.5 V
-1.5 V
-10 μA
-10 μA
100
320
15
MHz
NOTICE： ISC reserves the rights to make chan... |
| Document |
 B1370 Data Sheet
PDF 205.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | B1370 |
ROHM Electronics |
2SB1370 |
|
| 2 | B1375 |
Toshiba Semiconductor |
2SB1375 |
|
| 3 | B130 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 4 | B130 |
EIC |
SCHOTTKY BARRIER RECTIFIER |
|
| 5 | B130-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 6 | B130-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 7 | B1301 |
Renesas |
PNP SIlicon Transistor |
|
| 8 | B1302 |
Sanyo |
PNP Epitaxial Planar Silicon Transistor |
|
| 9 | B130B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 10 | B130BQ |
Diodes |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
Desde 2024. D4U Semiconductor.
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