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MJB13007 |
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| Part Number | MJB13007 |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot variations ... |
| Features |
ure
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
24
A
80
W
150
℃
-65~150 ℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.56 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
MJB13007
iisc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
MJB13007
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
400
V
VCE(sat)-1 VCE(sat)-2 VCE(sat)-3
Collector-Emitter ... |
| Document |
 MJB13007 Data Sheet
PDF 213.72KB |
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|---|---|---|---|---|
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Desde 2024. D4U Semiconductor.
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