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INCHANGE |
PNP Transistor tter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; |
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Inchange Semiconductor |
Triacs ·With TO-220AB insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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Inchange Semiconductor |
POWER TRANSISTOR VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -5V ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A; V |
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Inchange Semiconductor |
Triacs ·With TO-220AB insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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Inchange Semiconductor |
Triacs ·With TO-220AB insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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Inchange Semiconductor |
Silicon PNP Power Transistor 0mA ; IB= -1mA VBE(on) Base-Emitter On Voltage IC= -2mA ; VCE= -12V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -2V; IC= 0 hFE DC Current Gain IC=-2mA ; VCE= -12V fT Current-Gain—Bandwidth Product IC= |
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Inchange Semiconductor |
POWER TRANSISTOR ltage IC= -2mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V |
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INCHANGE |
Triac ·With TO-220AB insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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INCHANGE |
Triac ·With TO-220AB insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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INCHANGE |
Triacs · NPNPN five-layer silicon bidirectional device · With TO-P4 packaging · Advanced technology to provide customers with high commutation performances APPLICATIONS · General purpose motor control circuits · Home appliances · Phase control operations in |
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Inchange Semiconductor |
POWER TRANSISTOR ge IC= -2mA; IB= 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V IC |
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Inchange Semiconductor |
POWER TRANSISTOR CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -160 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -180 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 -6 V VCE(sat) Col |
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INCHANGE |
Triac ·With TO-220AB insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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INCHANGE |
Triac ·With TO-220AB insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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INCHANGE |
Triac ·With TO-220AB insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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INCHANGE |
Thyristor Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=14A VD =12V;RG=33Ω VD =12V;RG=33Ω Half cycle 1.5 V Ⅰ 25 Ⅱ Ⅲ 25 25 mA Ⅳ 100 1.5 V 2.1 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark |
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INCHANGE |
Triac ·With TO-220AB insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in light |
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Inchange Semiconductor |
Silicon PNP Power Transistor IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -0.5A ; VCE= -5V fT Current-Gain—Bandwidt |
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INCHANGE |
Silicon PNP Power Transistor IC= 1mA; IE= 0 120 V V(BR)EBO EmitterBase Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) CollectorEmitter Saturation Voltage IC= 8A; IB= 0.8A ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Curre |
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INCHANGE |
PNP Transistor 50mA ICBO Emitter Cutoff Current VCB= -150V; IE= 0 IEBO Collector Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -200mA ; VCE= -5V hFE Classifications R O 60-120 100-200 2SA1013 MIN TYP. MAX UNIT -1.5 V -1.0 μA -1.0 μA 60 |
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Desde 2024. D4U Semiconductor.
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