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2SA1011 |
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| Part Number | 2SA1011 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344 ·Minimum Lot-to-Lot variations for robus... |
| Features |
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞
-160
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
-180
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10mA; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-0.5
V
VBE(on) Base-Emitter On Voltage
IC= -10mA; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
-10 μA
hFE
DC Current Gain
IC= -0.3A; VCE= -5V
60
200
fT
Current-Gain—Bandwidth Product
IC= -50mA ; VCE= -10... |
| Document |
 2SA1011 Data Sheet
PDF 203.48KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA101 |
ETC |
Ge PNP Drift Transistor |
|
| 2 | 2SA1010 |
NEC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1010 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SA1010 |
SavantIC |
Silicon POwer Transistors |
|
| 5 | 2SA1011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA1011 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
Desde 2024. D4U Semiconductor.
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