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2SA1013 |
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| Part Number | 2SA1013 |
| Manufacturer | INCHANGE |
| Description | ·High Voltage and High Current Vceo=-160V(Min.） ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SC2383 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP... |
| Features |
50mA
ICBO
Emitter Cutoff Current
VCB= -150V; IE= 0
IEBO
Collector Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -200mA ; VCE= -5V
hFE Classifications R O 60-120 100-200 2SA1013 MIN TYP. MAX UNIT -1.5 V -1.0 μA -1.0 μA 60 200 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which... |
| Document |
 2SA1013 Data Sheet
PDF 166.72KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA101 |
ETC |
Ge PNP Drift Transistor |
|
| 2 | 2SA1010 |
NEC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1010 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SA1010 |
SavantIC |
Silicon POwer Transistors |
|
| 5 | 2SA1011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA1011 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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