| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
INCHANGE |
N-Channel Mosfet Transistor Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET Transistor S V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.16Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION · Ultra low gate charge · Ultra low ef |
|
|
|
|
INCHANGE |
N-Channel MOSFET ource Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With To-251(IPAK) package ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable ope |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applic |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device p |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 104mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power s |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power sup |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·I |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤104mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Lighting ·AC-DC Power Supply ·ABSOLUTE MAXIMUM RATINGS( |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER |
|
|
|
|
INCHANGE |
TO-252 N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.185Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak cur |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·Ultra low effe |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤160mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=2 |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=2 |
|
Desde 2024. D4U Semiconductor.
|