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4N65 |
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| Part Number | 4N65 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS. |
| Features | S V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time ID=4A; VDD=320V; RL=25Ω MIN TYPE MAX UNIT 650 V 2.0 4.0 V 1.4 V 2.5 Ω ±100 nA 10 µA 100 35 ns 80 60 NOTICE： ISC reserves the rights to make changes of the content herei. |
| Datasheet |
 4N65 Data Sheet
PDF 229.09KB |
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4N65 |
| Part Number | 4N65 |
| Manufacturer | PINGWEI |
| Title | N-Channel MOSFET |
| Description | 4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE 4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 4N65 ITO-220AB 4N65F TO-262 4N65H TO-263 4N65B TO-252 4N65G TO-251 4N65D Absolute Maximum Ra. |
| Features |
4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 4N65 ITO-220AB 4N65F TO-262 4N65H TO-263 4N65B TO-252 4N65G TO-251 4N65D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pu. |
4N65 |
| Part Number | 4N65 |
| Manufacturer | Unisonic Technologies |
| Title | N-Channel Power MOSFET |
| Description | The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies,. |
| Features | * RDS(ON) ≤ 2.5 Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness Power MOSFET SYMBOL www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-397.Q 4N65 Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N65L-TA3-T 4N65G-TA3-T TO-220 4N65L-TF1-T 4N6. |
4N65 |
| Part Number | 4N65 |
| Manufacturer | JINAN JINGHENG |
| Title | 650V N Channel Power MOSFET |
| Description | R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Green molding compound MECHANICAL DATA PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 650 2.4 @ VGS =10V TO-220AB 4N65 ITO-220AB 4N65F ID . |
| Features |
● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Green molding compound MECHANICAL DATA PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 650 2.4 @ VGS =10V TO-220AB 4N65 ITO-220AB 4N65F ID (A) 4 TO-263 4N65D ● Case:TO-220,ITO-220,TO-251,TO-252, TO-262,TO-263 Package 23 1 Ordering Information Part No. Package Packing 1 23 TO-262 4N65E 1 23 . |
4N65 |
| Part Number | 4N65 |
| Manufacturer | Zibo Seno |
| Title | Power MOSFET |
| Description | 4N60 4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM mot. |
| Features | * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL 2.Drain 4N60 4N65 Power MOSFET 1 1 TO-220 ITO-220/TO-220F 1 TO-251/IPAK 1 TO-252/DPAK 1.Gate 3.Source ORDERING INFORMATION Ordering Number Packag. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 4N60 |
ROUM |
4A 600V N-channel Enhancement Mode Power MOSFET |
|
| 2 | 4N60 |
Zibo Seno |
Power MOSFET |
|
| 3 | 4N60 |
KIA |
N-CHANNEL MOSFET |
|
| 4 | 4N60 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 5 | 4N60 |
nELL |
N-Channel Power MOSFET |
|
| 6 | 4N60 |
WEITRON |
Surface Mount N-Channel Power MOSFET |
|
| 7 | 4N60 |
INCHANGE |
N-Channel Mosfet Transistor |
|
| 8 | 4N60 |
HAOHAI |
N-Channel MOSFET |
|
| 9 | 4N60-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 10 | 4N60-CB |
UTC |
N-CHANNEL MOSFET |
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