INCHANGE 2ST Hoja de datos

No.	parte #	Fabricante	Descripción
1	2STW100	INCHANGE	NPN Transistor www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2STW100 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-E
2	2ST31A	INCHANGE	NPN Transistor ration Voltage IC= 3A; IB= 375mA ICEO Collector Cutoff Current VCE= 30V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC=20mA ; VCE=4V hFE-2 DC Current Gain IC=1A ; VCE=4V 2ST31A MIN TYP. MAX UNIT 60 V 1.2
3	2ST501T	INCHANGE	NPN Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 150mA; IC= 0 VCEO(sus) Collector-Emitter Voltage (IB = 0 ) Sustaining IC = 10 mA, ICEO Collector Cut-off Current (IB
4	2STD1665	Inchange Semiconductor	Silicon NPN Power Transistor Saturation Voltage IC= 1.0A; IB= 50mA VCE(sat)-3NOTE Collector-Emitter Saturation Voltage IC= 2.0A; IB= 50mA VCE(sat)-4NOTE Collector-Emitter Saturation Voltage IC= 6.0A; IB= 150mA VCE(sat)-5NOTE Collector-Emitter Saturation Voltage IC= 6A; IB= 3
5	2STW200	INCHANGE	PNP Transistor w.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2STW200 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emit
6	2STP535FP	INCHANGE	NPN Transistor iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2STP535FP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Volt