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2STP535FP |
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| Part Number | 2STP535FP |
| Manufacturer | INCHANGE |
| Description | ·With TO-220F packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance a... |
| Features |
iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2STP535FP
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 6mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 8A ,IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 8A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB=180V, IE= 0
ICEO
Collector Cutoff Current
VCE= 180V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-... |
| Document |
 2STP535FP Data Sheet
PDF 186.02KB |
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