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2STW200 |
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| Part Number | 2STW200 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type 2STW100 ·Minimum Lot-to-Lot variations for ... |
| Features |
w.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2STW200
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=- 50mA, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -20mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= -10A ,IB=- 40mA
VCE(sat)3 Collector-Emitter Saturation Voltage IC= -20A ,IB=- 80mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -20A ,IB= -80mA
VBE(on) Base-Emitter On Voltage
IC= -10A ;... |
| Document |
 2STW200 Data Sheet
PDF 199.38KB |
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Desde 2024. D4U Semiconductor.
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