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Inchange Semiconductor |
2SD5011 or-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA h |
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Inchange Semiconductor |
2SD1413 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A ;IB=4mA IC=2A ;I |
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Inchange Semiconductor |
Power Transistor 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE -1 DC Current Gain IC= 1A; VCE= 5V 15 40 hFE |
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Inchange Semiconductor |
2SD1308 ollector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V |
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INCHANGE |
Silicon NPN Power Transistor IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 0.03A VBE(on) Base-Emitter On Voltage IC= 0.05; VCE= 4V ICBO Collector Cutoff Current VCB= 25V; IE= 0 ICEO Col |
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INCHANGE |
NPN Transistor d SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A; IB= 0.2A ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; |
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Inchange |
Silicon NPN Power Transistors tor-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 200 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA hF |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff |
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INCHANGE |
NPN Transistor V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A VBE( |
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INCHANGE |
NPN Transistor down Voltage V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base -Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC |
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INCHANGE |
NPN Transistor METER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A VCE(sat)-2 Collector-Emitter Saturation |
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INCHANGE |
NPN Transistor 2SD1564 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A, IB= 2mA VBE(sat) Base-Emitt |
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Inchange Semiconductor |
Silicon NPN Power Transistor V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter C |
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Inchange Semiconductor |
Silicon NPN Power Transistors TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= |
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Inchange Semiconductor |
2SD428 CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICB |
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INCHANGE |
NPN Transistor S V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 5V ICBO Colle |
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INCHANGE |
NPN Transistor n Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC |
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INCHANGE |
NPN Transistor (sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 0.2A ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 5A; |
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INCHANGE |
NPN Transistor E(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 1500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A |
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INCHANGE |
NPN Transistor ONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.5 V VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 5A ; VCE= 5 |
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Desde 2024. D4U Semiconductor.
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