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2SD683 NPN Transistor Datasheet


2SD683

INCHANGE
2SD683
Part Number 2SD683
Manufacturer INCHANGE
Title CAP CER 0.068UF 10V 0805
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain- : hFE= 500(Min.)@ IC= 5A ·Minimum Lot-to-Lot variations for r...
Features (sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 0.2A ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 5A; VCE= 5V hFE-2 DC Current Gain IC= 15A; VCE= 5V...

Document Datasheet 2SD683 datasheet pdf (202.72KB)
Distributor Distributor
DigiKey
Stock 8715 In stock
Price
75000 units: 0.08767 USD
30000 units: 0.09393 USD
15000 units: 0.09706 USD
9000 units: 0.10019 USD
6000 units: 0.10645 USD
3000 units: 0.11272 USD
1000 units: 0.11898 USD
500 units: 0.1409 USD
100 units: 0.1785 USD
50 units: 0.2192 USD
10 units: 0.297 USD
1 units: 0.45 USD
BuyNow BuyNow BuyNow (Manufacturer a TAIYO YUDEN LMK212SD683JG-T)



2SD683

Toshiba
2SD683
Part Number 2SD683
Manufacturer Toshiba
Title Silicon NPN Transistor
Description SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD683A, HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE APPLICATIONS. FEATU.
Features : . High DC Current Gain : hFE=500(Min. ) (VCE=5V, Ic=5A) . High Voltage : VcEO(SUS)=450V (2SD683A) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm gfe5.0MAX. . JZfcLOMAX. I3fe _ +009 #1.0—0.03 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collec.

Document 2SD683 datasheet pdf




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