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2SD687 |
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| Part Number | 2SD687 |
| Manufacturer | SavantIC |
| Description | ·With TO-220C package ·Low collector saturation voltage ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Maximum absolute ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-b. |
| Features | r cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A; IB=4mA IC=2A; IB=4mA VCB=60V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 40 TYP. www.datasheet4u.com 2SD687 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V 1.5 2.0 20 2.5 V V µA mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=30V;RL=10= 0.1 1.0 0.2 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD687 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3. |
| Datasheet |
 2SD687 Data Sheet
PDF 124.99KB |
| Distributor | Stock | Price | Buy |
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2SD687 |
| Part Number | 2SD687 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applicati. |
| Features | V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A,IB= 4mA VBE(sat)) Base-Emitter Saturation Voltage IC= 2A,IB= 4mA ICBO Collector Cutoff Current VCB= 60V, IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V 2SD687 MIN TYP. MAX UNIT 40 V 1.5 . |
2SD687 |
| Part Number | 2SD687 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | 2SD687 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS. FEATURES : . High DC Current Gain : hFE=2000(Min.)(VCE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat) =1.5V(Max.)(I c =2A) MAXIMUM. |
| Features | : . High DC Current Gain : hFE=2000(Min.)(VCE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat) =1.5V(Max.)(I c =2A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO V CEO v EBO *C PC TJ Tstg RATING 60 40 5 3 25. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD683 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD683 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | 2SD683A |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SD684 |
Toshiba |
NPN Transistor |
|
| 5 | 2SD684 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD684A |
Toshiba |
NPN Transistor |
|
| 7 | 2SD685 |
Toshiba |
NPN Transistor |
|
| 8 | 2SD686 |
Toshiba |
NPN Transistor |
|
| 9 | 2SD686 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD686 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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