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2SD687 SILICON POWER TRANSISTOR Datasheet


2SD687

SavantIC
2SD687
Part Number 2SD687
Manufacturer SavantIC
Title Board to Board & Mezzanine Connectors
Description ·With TO-220C package ·Low collector saturation voltage ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse...
Features r cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A; IB=4mA IC=2A; IB=4mA VCB=60V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 40 TYP. www.datasheet4u.com 2SD687 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V 1.5 2.0 20 2.5 V V µA ...

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2SD687

Toshiba
2SD687
Part Number 2SD687
Manufacturer Toshiba
Title Silicon NPN Transistor
Description 2SD687 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER A.
Features : . High DC Current Gain : hFE=2000(Min.)(VCE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat) =1.5V(Max.)(I c =2A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation (Tc=25°C) Junctio.

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2SD687

INCHANGE
2SD687
Part Number 2SD687
Manufacturer INCHANGE
Title NPN Transistor
Description ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min) ·Low Collector-Emitter Saturation Vol.
Features V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A,IB= 4mA VBE(sat)) Base-Emitter Saturation Voltage IC= 2A,IB= 4mA ICBO Collector Cutoff Current VCB= 60V, IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Ga.

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