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2SD687 |
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| Part Number | 2SD687 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A ·Minimum Lot-to-L... |
| Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 2A,IB= 4mA
VBE(sat)) Base-Emitter Saturation Voltage
IC= 2A,IB= 4mA
ICBO
Collector Cutoff Current
VCB= 60V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
2SD687
MIN TYP. MAX UNIT
40
V
1.5
V
2.0
V
20
μA
2.5 mA
2000
1000
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= 30V; IB1= IB2= 6mA, RL= 10Ω
0.1
μs
1.0
μs
0.2
μs
NOTICE： ISC reserves the rights to make chang... |
| Document |
 2SD687 Data Sheet
PDF 205.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD683 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD683 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | 2SD683A |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SD684 |
Toshiba |
NPN Transistor |
|
| 5 | 2SD684 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD684A |
Toshiba |
NPN Transistor |
|
| 7 | 2SD685 |
Toshiba |
NPN Transistor |
|
| 8 | 2SD686 |
Toshiba |
NPN Transistor |
|
| 9 | 2SD686 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD686 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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