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| Distributor | Stock | Price | Buy |
|---|
2SD998 |
| Part Number | 2SD998 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB778 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier output st. |
| Features | ONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.5 V VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 5A ; VCE= 5V VCB= 120V ; IE= 0 1.5 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A ; VCE= 5V 55 160 COB Output . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD992-Z |
NEC |
NPN Silicon Transistor |
|
| 2 | 2SD993 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD995 |
Sanyo Semicon Device |
NPN Transistor |
|
| 4 | 2SD999 |
NEC |
NPN Silicon Transistor |
|
| 5 | 2SD999 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | 2SD999 |
GME |
NPN Silicon Transistor |
|
| 7 | 2SD999 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR |
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| 8 | 2SD999 |
Kexin |
NPN Silicon Transistor |
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| 9 | 2SD999 |
Jin Yu Semiconductor |
NPN Transistor |
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| 10 | 2SD999CK |
WILLAS |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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