| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
2SK2586 • Low on-resistance • RDS(on) = 7 m typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 2 |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Dr |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2569 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volt |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control Outline TO-220AB Preliminary D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK2590 Absolute |
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Hitachi Semiconductor |
2SK2554 • Low on-resistance • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-359 D 5th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2554 Absolute Maximum Ratings (Ta |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2529 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source v |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta |
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Hitachi Semiconductor |
Silicon N-Channel MOS FET • • • • Low on-resistance R DS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to so |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2568 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor Control Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2590 Absolute Maxim |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is r |
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Hitachi Semiconductor |
2SK2568 • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2568 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Desde 2024. D4U Semiconductor.
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