K2586 |
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Part Number | K2586 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK2586 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 m typ. • High speed switching • 4 V gate drive device can be driven from 5 V source... |
Features |
• Low on-resistance • RDS(on) = 7 m typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-358 C 4th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID*2 I *1... |
Datasheet |
![]() PDF 33.17KB |
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