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2SK2586 |
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| Part Number | 2SK2586 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device... |
| Features |
• • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2586 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID* 2 1 Ratings 60 ±20 60 240 60 4... |
| Document |
 2SK2586 Data Sheet
PDF 34.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK258 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK2503 |
Rohm |
Small switching Transistors |
|
| 3 | 2SK2503 |
Guangdong Kexin Industrial |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2503 |
TY Semiconductor |
Transistor |
|
| 5 | 2SK2504 |
Rohm |
Small switching Transistors |
|
| 6 | 2SK2504 |
Guangdong Kexin Industrial |
Silicon N-Channel MOSFET |
|
| 7 | 2SK2504 |
TY Semiconductor |
Transistor |
|
| 8 | 2SK2507 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 9 | 2SK2508 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK2510 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET |
|
Desde 2024. D4U Semiconductor.
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