| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
Silicon P-Channel MOS FET • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ1 |
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Hitachi Semiconductor |
2SJ114 |
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Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
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Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ1 |
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Hitachi Semiconductor |
Silicon P-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.13 , VGS = –10 V, I D = –4 A R DS(on) 0.17 , VGS = –4 V, I D = –4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lamp |
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Hitachi Semiconductor |
HIGH FREQUENCY POWER AMPLIFIER |
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Desde 2024. D4U Semiconductor.
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