J117 |
Part Number | J117 |
Manufacturer | Hitachi Semiconductor |
Description | 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application www.DataSheet4U.com High speed power switching Features • • • • High speed switching Good frequency characterist... |
Features |
• • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ117 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. Value at TC = 25°C www.DataSheet4U.com Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings –400 ±20 –2 ... |
Document |
J117 Data Sheet
PDF 72.02KB |