Busque con el número de pieza junto con el fabricante o la descripción
2SJ117 |
Click to view a larger image
| Part Number | 2SJ117 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe... |
| Features |
• • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ117 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings –400 ±20 –2 –4 –2 40 150 –55 to +... |
| Document |
 2SJ117 Data Sheet
PDF 20.93KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ111 |
Toshiba |
Silicon P-Channel Transistor |
|
| 2 | 2SJ112 |
ETC |
MOSFET |
|
| 3 | 2SJ113 |
Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
|
| 4 | 2SJ114 |
Hitachi Semiconductor |
HIGH FREQUENCY POWER AMPLIFIER |
|
| 5 | 2SJ115 |
ETC |
SILICON P-CHANNEL MOS FET |
|
| 6 | 2SJ115 |
Toshiba |
SILICON P-CHANNEL MOS FET |
|
Desde 2024. D4U Semiconductor.
|