| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
PNP Transistor |
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Hitachi Semiconductor |
2SB1031 |
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Hitachi Semiconductor |
2SB1032 est I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 4.0 Max Unit —V —V –100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V 3.0 V — µs — µs Test conditions IC = –25 mA, RBE = ∞ |
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Hitachi Semiconductor |
2SB1079 tion voltage I CBO I CEO hFE VCE(sat)1 — — — — 1000 — — — Base to emitter saturation VBE(sat)1 — — voltage Collector to emitter saturation VCE(sat)2 — — voltage Base to emitter saturation VBE(sat)2 — — voltage Turn on time Stora |
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Hitachi Semiconductor |
Silicon PNP Transistor ance Note: Mark hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 Min –70 –50 –6 — — 100 — — — — Typ — — — — — — — — 150 35 Max — — — –0.1 –0.1 320 –0.6 –1.2 — — Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I |
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Hitachi Semiconductor |
2SB1012 = –1 A, IB = –1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I C = –1 A, IB = –1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I D = 1.5 A*1 I C = –1 A, IB1 = –IB2 = –1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff cu |
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Hitachi Semiconductor |
PNP Transistor |
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Hitachi Semiconductor |
PNP Transistor = –IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn o |
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Hitachi Semiconductor |
LOW FREQUENCY POWER AMPLIFIER |
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Hitachi Semiconductor |
PNP Transistor |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 1.5 A, IB = –1.5 mA*1 I C = –1 A, IB = –1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I D = 1.5 A*1 I C = –1 A, IB1 = –IB2 = –1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO D |
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Hitachi Semiconductor |
Silicon PNP Transistor — — — — — — — — Max — — — –10 200 — –1.0 –0.9 Unit V V V µA Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –0.15 A, pulse VCE = –5 V, IC = –0.5 A, pulse V V I C = –0.5 A, IB = |
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Hitachi Semiconductor |
PNP Transistor 60 — — 2000 — — Typ — — — — — — — Max — — –10 –10 100000 –2.0 –2.0 V V Unit V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IE = 0 VCE = –3 V, IC = –500 mA*1 I C = –500 mA, IB = –1 mA*1 I C = –500 m |
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Hitachi Semiconductor |
PNP Transistor ∞ I C = –200 mA, RBE = ∞*1 I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –80 V, RBE = ∞ VCE = –3 V, IC = –10 A*1 I C = –10 A, IB = –20 mA*1 Collector to emitter breakdown V(BRCEO voltage Collector to emitter sustain voltage Emitter to base breakd |
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Hitachi Semiconductor |
Silicon PNP Transistor |
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Hitachi Semiconductor |
LOW FREQUENCY POWER AMPLIFIER |
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Hitachi Semiconductor |
LOW FREQUENCY POWER AMPLIFIER |
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Hitachi Semiconductor |
LOW FREQUENCY POWER AMPLIFIER |
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Hitachi Semiconductor |
Silicon PNP Transistor |
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Hitachi Semiconductor |
Twin Build in Biasing Circuit MOS FET IC • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withsta |
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Desde 2024. D4U Semiconductor.
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