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B1012 |
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| Part Number | B1012 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 5 kΩ (Typ) 1 kΩ (Typ) 1 1 ... |
| Features |
= –1 A, IB = –1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I C = –1 A, IB = –1 mA*1 I C = –1.5 A, IB = –1.5 mA*1 I D = 1.5 A*1 I C = –1 A, IB1 = –IB2 = –1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SB1012(K) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W)... |
| Document |
 B1012 Data Sheet
PDF 113.93KB |
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