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2SB1079 |
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| Part Number | 2SB1079 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB1079 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1559 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 kΩ (Typ) 400 Ω (Typ) 3 ... |
| Features |
∞ I C = –200 mA, RBE = ∞*1 I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –80 V, RBE = ∞ VCE = –3 V, IC = –10 A*1 I C = –10 A, IB = –20 mA*1 Collector to emitter breakdown V(BRCEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Note: 1. Pulse Test. hFE VCE(sat)1 VBE(sat)1 VCE(sat)2 VBE(sat)2 t on t stg 2 ... |
| Document |
 2SB1079 Data Sheet
PDF 36.25KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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