Hitachi D22 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SD2299	Hitachi Semiconductor	Silicon NPN Triple Diffused Transistor
2	TMCP1D224	Hitachi	(TMCP Series) Tantalum Chip Capacitors
3	D2256	Hitachi	Silicon NPN Triple Diffused • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collec
4	2SD2263	Hitachi Semiconductor	Silicon NPN Transistor • Build in zener diode for surge absorb. • Suitable for relay drive with small power loss. Outline TO-92 (1) 2 3 ID 1. Emitter 2. Collector 3. Base 3 2 1 1 2SD2263 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to
5	2SD2256	Hitachi	Silicon NPN Transistor • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collec
6	TX14D22VM1BAA	Hitachi	LCD
7	HP32D221MRX	Hitachi	SNAP-IN TYPE ALUMINUM ELECTROLYTIC CAPACITORS • Rendered about 20% to 30% smaller than the preceding HPR and HFR type predecessor thanks to etching foil magnification increase. Product Specifications Items Temperature range –40°C ~ +85°C Specifications Capacitance tolerance Rated voltage Lea
8	2SD2213	Hitachi Semiconductor	Silicon NPN Transistor I C = 1 A1, I B = 1 mA I D = 1.5 A1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE hFE Collector to emitter saturation voltage Base
9	2SD2247	Hitachi Semiconductor	Silicon NPN Transistor age Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Grade hFE B 100 to 200 C 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 — — — — VCE(sat) VBE fT Cob V V Mhz pF I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V
10	TX14D22VM1BPA	Hitachi	LCD