Busque con el número de pieza junto con el fabricante o la descripción
D2256 |
Click to view a larger image
| Part Number | D2256 |
| Manufacturer | Hitachi |
| Description | 2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high curren... |
| Features |
• High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 25 35 120 150 –55 to +150 25 Unit V V V A A W °C °C A Elec... |
| Document |
 D2256 Data Sheet
PDF 31.96KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D2250 |
Panasonic Semiconductor |
2SD2250 |
|
| 2 | D2251 |
Sanyo Semicon Device |
2SD2251 |
|
| 3 | D2253UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 4 | D2254UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 5 | D2255 |
Panasonic Semiconductor |
Power Transistors |
|
| 6 | D2256UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
Desde 2024. D4U Semiconductor.
|