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2SD2213 |
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| Part Number | 2SD2213 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD2213 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 15 kΩ (Typ) 0.5 Ω (Typ) 1 1. Emitter 2. Collector 3. Base 3 2 1 2SD2213 Absolute Maxim... |
| Features |
I C = 1 A*1, I B = 1 mA I D = 1.5 A*1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE hFE Collector to emitter saturation voltage Base to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test VCE(sat) VBE(sat) VD
2
2SD2213
Area of Safe Operation Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (A) 3 1 0.3 0.1 0.03 0.01 0 50 100 Ambient Temperature Ta (°C) 150 1 3 10 30 100 Collector to Emitter Voltage VCE (V) ... |
| Document |
 2SD2213 Data Sheet
PDF 32.83KB |
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Desde 2024. D4U Semiconductor.
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