Hitachi 2SD Hoja de datos

No.	parte #	Fabricante	Descripción
1	D669A	Hitachi Semiconductor	2SD669A — — — 140 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA2 VCE = 5 V, IC = 500 mA2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V
2	D476	Hitachi Semiconductor	2SD476 5 —— V IE = 10 µA, IC = 0 Collector cutoff current ICBO DC current transfer ratio hFE1 ——1 ——1 µA VCB = 50 V, IE = 0 60 — 200 60 — 200 VCE = 4 V, IC = 1 A (Pulse test) Collector to emitter saturation voltage hFE2 VCE(sat) 35 — —— — 35 — 1
3	2SD667	Hitachi Semiconductor	Silicon NPN Transistor
4	2SD669A	Hitachi Semiconductor	Silicon NPN Transistor — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA2 VCE = 5 V, IC = 500 mA2 I C = 500 mA, I B = 50 mA2 VCE = 5 V, IC = 150 mA2 VCE = 5 V, IC = 150 mA*2
5	D2101	Hitachi Semiconductor	2SD2101 10 mA1 I C = 10 A, IB = 100 mA1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to e
6	D668	Hitachi	2SD668
7	D1978	Hitachi	2SD1978
8	2SD1377	Hitachi	Silicon NPN Transistor
9	D668A	Hitachi	2SD668A
10	D669	Hitachi Semiconductor	2SD669 *1 hFE2 Collector to emitter saturation voltage VCE(sat) —— 60 — 30 — —— 10 — 320 60 — 30 1— — — — — 10 200 — 1 Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob — — 1.5 — — 1.5 — 140 — — 140 — — 14 —
11	2SD669	Hitachi Semiconductor	Silicon NPN Transistor — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA2 VCE = 5 V, IC = 500 mA2 I C = 500 mA, I B = 50 mA2 VCE = 5 V, IC = 150 mA2 VCE = 5 V, IC = 150 mA*2
12	2SD1609	Hitachi Semiconductor	Silicon NPN Transistor A Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f
13	2SD1868	Hitachi Semiconductor	Silicon NPN Epitaxial Type Transistor B 60 to 120 C 100 to 200 VBE VCE(sat) fT Cob 1 Typ — Max — Unit V Test conditions I C = 10 µA, IE = 0 — — V I C = 1 mA, RBE = ∞ 2SD1868 I CBO 2SD1869 DC current transfer ratio 60 30 — — — — D — — — — 140 3.8 320 — 1.5 2 — — V V MHz pF
14	D2103	Hitachi Semiconductor	2SD2103 akdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 ICE(sat)2 VBE(sat)1 VBE(sat)2 IC = 4 A, IB = 8 mA* IC
15	D970	Hitachi Semiconductor	2SD970 80 mA1 I C = 4 A, IB = 8 mA1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector t
16	D768	Hitachi Semiconductor	2SD768 = 6 mA1 I C = 6 A, IB = 60 mA1 I C = 3 A, IB1 = –IB2 = 6 mA I C = 3 A, IB1 = –IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Coll
17	2SD655	Hitachi Semiconductor	Silicon NPN Transistor ter voltage Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product V(BR)EBO I CBO VBE VCE(sat) hFE*1 fT Notes: 1. The 2SD655 is grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 F 600 to 1200 2 2
18	2SD756	Hitachi Semiconductor	Silicon NPN Transistor — V V Unit Test conditions V V µA IC = 1 mA, RBE = ∞ IC = 10 µA, IE = 0 VCB = 100 V, I E = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 10 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA Typ — — — — — — — 350 1.6 — 250 125 — — — — DC current transfer r
19	2SD787	Hitachi Semiconductor	Silicon NPN Transistor = 10 µA, IC = 0 VCB = 16 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1 A I C = 1 A, IB = 0.1 A VCE = 2 V, I C = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Typ — — — — — — — 100 20 20 16 6 — — 100 — — — DC current transfer ratio hFE* Collector to emitte
20	2SD970K	Hitachi Semiconductor	Silicon NPN Transistor IB = 80 mA*1 I C = 4 A, IB1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitt