| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi |
2SB1046 |
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Hitachi Semiconductor |
2SB647 10 320 — –1 Typ Max Unit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 |
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Hitachi Semiconductor |
2SB1391 — — — — — — Max Unit —V —V —V –10 µA –10 20000 –1.5 V –3.0 –2.0 V –3.5 Test conditions IC = –0.1 mA, IE = 0 IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 IC = –4 A, IB = –8 mA*1 IC = –8 |
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Hitachi |
2SB648 |
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Hitachi Semiconductor |
2SB1031 |
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Hitachi Semiconductor |
2SB1032 est I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 4.0 Max Unit —V —V –100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V 3.0 V — µs — µs Test conditions IC = –25 mA, RBE = ∞ |
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Hitachi |
PNP Transistor |
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Hitachi Semiconductor |
Silicon PNP Transistor nditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –150 mA VCB = –10 V, IE = 0, f = |
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Hitachi |
2SB648 |
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Hitachi Semiconductor |
2SB1079 tion voltage I CBO I CEO hFE VCE(sat)1 — — — — 1000 — — — Base to emitter saturation VBE(sat)1 — — voltage Collector to emitter saturation VCE(sat)2 — — voltage Base to emitter saturation VBE(sat)2 — — voltage Turn on time Stora |
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Hitachi |
Low frequency power amplifier V, IC = –20 mA*1 VCE = –1.5 V, IC = –100 mA*1 I C = –100 mA, IB = –0.2 mA*1 I C = –100 mA, IB = –0.2 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO I EBO DC curren |
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Hitachi Semiconductor |
2SB727 n t off — — 1000 — — — — — — Typ — — — — — — — — — 1.0 3.0 Max Unit —V —V –100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V — µs — µs Test conditions IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, I |
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Hitachi Semiconductor |
High Density Dynamic RAM Module • 72-pin single in-line package — Lead pitch: 1.27 mm • Single 5 V (± 5%) supply • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 4.62W/4.20W/3.78W (max) — Standby mode: 84 mW (max) 4.2 mW (max) (L-version) • |
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Hitachi Semiconductor |
Silicon PNP Transistor ance Note: Mark hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 Min –70 –50 –6 — — 100 — — — — Typ — — — — — — — — 150 35 Max — — — –0.1 –0.1 320 –0.6 –1.2 — — Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor ollector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat) 60 20 — — V V |
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Hitachi Semiconductor |
Silicon PNP Transistor • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1688 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current C |
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Hitachi Semiconductor |
Silicon PNP Transistor — Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, I C = –0.15 A (Pulse test) VCE(sat) VBE fT Cob V V MHz pF I C = –0.5 A, IB = –0.05 A VCE = –1 V, IC = –0.15 A VCE = – |
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Hitachi Semiconductor |
Silicon PNP Transistor = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –10 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA V(BR)CBO –100 — V(BR)CEO –100 — ICBO — — — — — — — — 150 1.8 –120 — –120 — — — 250 125 — — — — — — 150 1.8 –140 — –140 — — — |
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Hitachi Semiconductor |
2SB765 |
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Hitachi Semiconductor |
2SB861 lector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Collector output capacitance VCE(sat) VBE Cob 60 60 — — — V V pF I C = –500 mA, IB = –50 mA VCE = –4 V, IC = |
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Desde 2024. D4U Semiconductor.
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